Philips Semiconductor MX0912B351Y RF Transistor 1 ea for Sale

Philips Semiconductor MX0912B351Y RF Transistor 1 ea For Sale

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Philips Semiconductor MX0912B351Y RF Transistor 1 ea:
$125.00

Please refer to the part number manufactures data-sheet to get full details. This listing is for 1 each/individual, will considers offers if buying more than 1.

DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in class C.

FEATURES
• Interdigitated structure; high emitter efficiency
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Input and output matching cell allows an easier design of circuits.

APPLICATIONS
Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application.

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